Plasma reactor vessel and assembly, and a method of performing plasma processing

ABSTRACT

Plasma reactor vessel comprising a vacuum chamber; a first electrode in the vacuum chamber; a second electrode in the vacuum chamber, opposed to the first electrode and spaced from the first electrode; a power source electrically connected to one of the first or second electrodes; a substrate carrier having an electrically conductive material, the substrate carrier being configured to be in electrical contact with the second electrode and to hold a substrate at such that at least the majority of upper and lower surfaces of the substrate are untouched by any part of the plasma reactor and can be exposed to the plasma. The reactor vessel further includes a third electrode between the substrate carrier and the second electrode, wherein the third electrode is electrically insulated from the second electrode. And the third electrode and the substrate carrier are arranged such that when the substrate carrier holds a substrate, a first clearance gap is between the substrate and the third electrode. There is further provided a corresponding assembly and method for performing plasma processing.

FIELD OF THE INVENTION

The present invention concerns a plasma reactor vessel which can be usedto perform plasma deposition on a substrate, the plasma reactor vesselcomprising three electrodes, and a substrate carrier which is configuredto hold substrate so that a majority of the substrates upper and lowersurfaces remain untouched by the substrate carrier or any other part ofthe plasma reactor vessel. There is further provided a plasma reactorassembly and a method of performing plasma processing.

DESCRIPTION OF RELATED ART

FIG. 1 illustrates a conventional plasma capacitor processing reactor100. A first planar electrode comprises a metallic plate 2 facing asubstrate 11. The first electrode 2 is fed with RF voltage via an inlet3, and surrounded by a grounded liner 4. Modern PECVD reactors delivertheir process gas through the first electrode as represented bydistributed arrows 99. A second electrode of the parallel platecapacitor is the metallic back-plate 8, on which the substrate 11 islaying in contact with the second electrode 8 by its face 1. As shown inFIG. 1, the substrate 11 can be inserted in a recess 10 provided in theback-plate 8 such that the exposed surface 11′ of the substrate 11remains sensibly in planar continuity with the surface of the back-plate8 exposed to the plasma 5. The recess 10 allows keeping the plasmaboundary free of a geometrical step, although in many PECVD processingtool, the substrate merely lay flat on a flat back plate sometimescalled susceptor (when it is provided with heat) or chuck (when it isforcing flat the wafer). The back-plate 8 is electrically connected toground via connector 9. The RF inlet 3 and connector 9 can be inverted.Indeed, there is a degree of freedom on where the RF power is fed onboth electrodes 2, 8, provided the potential difference between theelectrodes 2, 8 is insured. For most conventional plasma processing, thedelivered RF power is at the standard frequency of 13.56 MHz, but thereis a trend to use higher frequency for silicon based PECVD (say up to100 MHz). Plasma 5 is made of the ionized fraction of a low pressurebackground gas. For PECVD deposition, this plasma is made of reactivegases. The plasma 5 is located in the central zone of the plasmacapacitor gap. In first approximation, the plasma slab 5 can beconsidered as a conductive block at a single given voltage called plasmapotential which itself is the superposition of a DC component and an RFcomponent. Within plasma boundaries 6, 7, or sheaths, the plasma freeelectron density drops dramatically and, at first order, the plasmaboundaries 6, 7 can be considered as empty nonconductive layers crossedby the RF current in a capacitive manner. In a classical design thesubstrate 11 is laying in contact with the back-plate 8 and the spacingbetween the back side of the substrate 1 and the back-plate electrode 8is virtually zero. Thank to that contact, the RF voltage of thesubstrate 11 is essentially the same as the one on the adjacent surfaceof the back-plate 8. It is implied here that the extra impedanceassociated to the RF current flow across the substrate is actuallynegligible. This mechanical contact at the spacing interface 1 providesgood continuity of the voltage setting at the boundary of sheath 6.However, due to that contact, the substrate backside is actually infriction contact in several areas with the back-plate 8.

Because of the sensitivity of device performance to interfacecontamination, a standard processing technique consists in carefullycleaning the substrate (wet process) prior to its entry in the load lockof a low pressure process system. During the atmospheric transfer thesubstrate can be handled either by a contactless pick up device withBernoulli effect as described in U.S. Pat. No. 4,969,676 or by graspingthe substrate only in limited areas located on the very edge of thesubstrate, contact areas that are off limit for the active device. Whenthe substrate is inside the low pressure processing equipment and whenit is to be exposed to RF plasma, it is a standard practice to lay thesubstrate on a metallic counter plate in order to carefully set thevoltage behind the substrate. Indeed, in a plasma capacitor, the RFcurrent is flowing transversally to the parallel electrode plane and itis necessary to provide a grounding electrode and return path for the RFcurrent traversing the substrate. The difficulty is that the physicalcontact between the substrate backside surface and the counter plate isenough to contaminate the substrate, transferring chemical contaminationor particles. This contamination may jeopardize any further processingof the substrate back side. At this point, there are two options, the1^(st) one is to bring back the substrate to atmosphere after coatingone face, flip the substrate, clean thoroughly the backside and loadagain in the low pressure system to further process the other side ofthe substrate. As vacuum processing has a significant entry cost relatedto the time consumed in load-lock operation plus heating/cooling anddegassing, such a process sequence with two passes in a vacuum systemimplies a high production cost. The 2^(nd) solution consists inaccepting the risk of backside contamination and possibly degradeddevice performance. After deposition on the wafer top face while it islaid on a back plate, the internal handling system of the productiontool flips the wafer and continues the process for the other side of thewafer. This is a process sequence as described in EP2333814. One shouldnote that flipping a fragile material slice such as a thin silicon waferis rather risky in terms of probability of breakage. One of the leadingreasons for this breakage risk is due to the absence of atmosphericvibration damping.

The manufacture of hetero-junction cells is disclosed in U.S. Pat. No.5,066,340 and U.S. Pat. No. 6,207,890. Basically the manufacturingprocess for hetero-junction cells start with a thin good qualitycrystalline or polycrystalline silicon wafer. The wafer can bemoderately doped. In order to turn it into a photodiode, layers ofamorphous silicon are deposited, with p doping on one side (boron doped)and n doping (phosphorus doped) on the opposite side. As a consequence,a photovoltaic heterojunction cell is grown from a silicon wafer. AfterPECVD growth, the initial open surfaces of the wafer are deeply embeddedin the core of the device structure. From this it is easily understoodthat the device is very sensitive to any defect or impurity that wouldbe initially attached to the wafer surfaces. Prior to the coating of thecrystal silicon based wafer, it is of great importance that the wafersurface is extremely well cleaned. This cleaning incorporates at the endof the wet cleaning sequence a so-called etch/passivation process basedon a hydrofluoric acid exposure. The HF based etch is known to removethe oxidized surface of the wafer and leave a hydrogen saturated surfaceof clean and perfectly organized silicon crystal. This hydrogen basedpassivation is known to survive a few minutes in clean air. Soon after,the silicon oxidizes again, and/or chemisorptions incorporate gaseousimpurities on the semiconductor surface. This is why just after the lastetch wet clean, the silicon substrate should be readily introduced inthe load lock and kept inside a clean vacuum machine.

If a silicon wafer is introduced in a vacuum system and kept lying on asubstrate holder or an electrostatic chuck, it will be in physical andchemical contact with its support. Because of this physical and chemicalcontact with its support there is a critical risk for contamination ofthe surface of the silicon wafer. Moreover it is advantageous if all theprocesses on both sides of the wafer are completed in one vacuumsequence; otherwise, if one side of the wafer is coated, when thesubstrate is brought back to air, the etch clean passivation of theother side will be damaged and will have to be performed again (with therisk of damaging by wet etching the wafer side already coated).

We will discuss here the rather straightforward solution consisting inkeeping a clearance gap between the back of the substrate and the secondelectrode as back plate. FIG. 2a illustrates a portion of a plasmareactor comprising a first clearance gap 12 between a substrate 11 andthe back electrode 8 and wherein the substrate 11 is held in a substratecarrier 13 in electrical contact with the electrode 8. In thisconfiguration, the substrate backside is in mechanical contact with theelectrode 8 solely via the edge contacts 13′ with the substrate carrier13. However the body of the substrate 11 is in capacitive relation withthe electrode 8 facing its backside. The substrate upper surface isexposed to the plasma 5 comprising a plasma sheath 6. In thisconfiguration, the RF current flowing transversely first crosses theplasma sheath 6 as a vacuum capacitor, then crosses the substrate 11.Here again, the resistance (or capacitive impedance) for the RF currentto cross the substrate 11 is neglected. The RF current also must crossthe extra capacitor constituted by the first clearance gap 12 or,possibly, flow horizontally in the substrate.

FIG. 2b represents an equivalent RF circuit of the plasma reactor shownin FIG. 2 a. In the equivalent circuit, the plasma sheath 6′ and thefirst clearance gap 12 are described by capacitors C_(s) and C_(g),respectively. Current transport along the surface of the substrate 11 isdescribed by the resistive sheet R_(□) expressed in Ohm square. Theplasma RF potential is represented by the conductive line 15. Thecontact resistance R_(c) is representing the electric contact betweenthe substrate 11 and the substrate carrier 13 at edge 13′. As thesubstrate holding scheme is arranged to minimize the contact surface atthe very edge of the wafer, it is reasonable to assume that R_(c) isvery large and that only a negligible fraction of the RF current isflowing through the contact points, hence, in first approximation, wemay consider the substrate as floating. In such a case the ratio of thedriving voltage V_(eff) across the plasma sheath 6′ in front of thesubstrate to the full RF voltage difference V_(RF) available between theplasma 5 and 15 and ground 8 and 13 can be calculated as in a classicalcapacitive divider via Equation (1):

V _(eff) /V _(RF) =e _(s)/(e _(s) +e _(g))   (1),

where e_(s) is an equivalent thickness of the plasma sheath 6′ and e_(g)is the width of the first clearance gap 12.

In a typical RF processing plasma e_(s) is typically comprised between 1mm and 4 mm. If e_(g) is 1 mm, the ratio V_(eff)/V_(RF) varies from 80%to 50%. The voltage along the plasma sheath when moving along thesurface from sheath 6 in front of the electrode 8 (via the conductivesubstrate carrier 13) to sheath 6′ in front of the substrate isexperiencing a significant drop in driving RF voltage amplitude, thusthe plasma is significantly non-uniform.

Would the contact points between the substrate 11 and the frame 13 beenough to collect a significant fraction of the RF current, then thehorizontal conductivity of the substrate may transmit the RF voltagealong the substrate with some damping due to sheet resistance. Suchtransmission can be described by the telegrapher's equation where alateral perturbation of the voltage is damped exponentially on a scale Lgiven by Equation (2):

L ²=2e _(s) e _(g)/[ε₀ ωR _(□)(e _(s) +e _(g))]  (2)

The screening length L is an estimate of the distance on which the RFvoltage will change from a pinning side contact to the floating case ofEquation (1). It can be estimated for typical plasma processingcondition, a frequency of 13,56 MHz, sheath thickness of 2 mm, and firstclearance gap 12 of 1 mm. This scaling length is about 40 cm for asubstrate square resistance of 10Ω, 13 cm for 100Ω, and 4 cm for 1000Ω.In a large range of substrate conductivity from 10 to 1000Ω square, thescreening length is never significantly larger than the size of thesubstrate of interest; hence, in any case, the substrate horizontalconductivity is not able to equalize the RF voltage across the plasmasheath between the center and the edge of the substrate.

The consequence is that when a first clearance gap 12 is present betweena substrate and the back electrode, the RF voltage in the plasma sheath6′ in front of the substrate is reduced significantly due to the firstclearance gap that combines with the sheath to create a capacitivedivider. The adjacent plasma zone has the full RF voltage across itssheath 6. It is recalled here that in standard plasma capacitors the RFsheath voltage provides the driving energy for the plasma, and that theresulting plasma density scales as the square of this RF voltage. As wehave estimated that, in presence of the first clearance gap, the RFvoltage ratio V_(eff)/V_(RF) reduce to 80% or less, this implies thatbetween the grounded edges and the central zone of a substrate, theplasma production intensity varies from 100% to 64% or less. As theelectrons in the plasma are diffusing this plasma power non uniformitywill smear laterally and a process non uniformity will stretch from thesubstrate edges toward the wafer central zone.

To summarize, one of the most obvious consequences of the existence of aclearance gap behind the substrate is poor process uniformity. In somecases this RF sheath voltage variation has even more drastic drawbacks.In particular for silane based PECVD processes, the stronger edge plasmawill induce an early trigger for local excessive plasma dust formation.The trapping of the dust cloud in the local sheath will even furtherdeteriorate plasma uniformity.

US2013112546 discloses a sputtering system having a processing chamberwith an inlet port and an outlet port, and a sputtering targetpositioned on a wall of the processing chamber. There is also discloseda plurality of processing chambers which are connected via a vacuumpassage.

US2008061041 discloses a plasma treatment apparatus includes a firstelectrode, a second electrode provided so as to face the first electrodevia the work so that a space is formed between the second electrode andthe work, a gas supply unit which supplies a gas into the space, a powercircuit having a power source which applies a high frequency voltageacross the first and second electrodes so that the gas supplied into thespace is converted into a plasma, and a support unit which supports atleast a part of the second region of the work so that the work is spacedapart from the first electrode in a distance at which discharge does notoccur between the first region and the first electrode when the highfrequency voltage is applied across the first and second electrodes.

US2009294062 discloses a plasma reactor employing source and bias RFpower generators, plasma is stabilized against an engineered transientin the output of either the source or bias power generator by acompensating modulation in the other generator.

US2010282709 discloses a substrate plasma-processing apparatus forplasma-processing a surface of an electrode of an organic light emittingdevice. The substrate plasma-processing apparatus may adjust thedistance between a first electrode and a substrate and adjust thedistance between a second electrode and the substrate.

KR20080020722 discloses a plasma processing apparatus is provided toimprove uniformity of a plasma treatment process by generating a highdischarge effect on the entire surface of a substrate. A plasmatreatment process is performed in a process chamber. Upper and lowerelectrodes are installed in the process chamber, confronting each other.A gas supply member supplies process gas in a manner that a flow of theprocess gas is induced from the lateral surface of the circumference ofthe substrate loaded between the upper and the lower electrodes towardthe center of the substrate.

SUMMARY

It is an aim of the present invention to obviate or mitigate at leastsome of the above-mentioned disadvantages.

One aim of the invention is to perform RF processing of both sides of asubstrate in a single vacuum sequence.

Another aim of the invention is to eliminate contamination due tofriction or contact on the active areas of the substrate, which canoccur when the substrate surface is in contact with a back electrode.

Another aim is to avoid plasma non uniformity induced by a mechanicalclearance between the substrate and the back plate electrode.

Another aim of the invention is to avoid mechanically flipping of thesubstrate under vacuum. Mechanical flipping of the substrate undervacuum implies a risk of wafer breakage.

The present invention achieves these aims by providing a plasma reactorvessel in which the active parts of the substrate remain untouched bythe substrate holder or any other part of the plasma reactor vessel suchas an electrode in the plasma reactor vessel.

The present invention achieves these aims by means of a plasma reactorvessel, which comprises, a vacuum chamber; a first electrode in thevacuum chamber; a second electrode in the vacuum chamber, opposed to thefirst electrode and spaced from the first electrode; a means forproviding plasma in the vacuum chamber; a power source electricallyconnected to one of the first or second electrodes, for applying a mainRF voltage to one of the first or second electrodes, the other electrodebeing grounded; a substrate carrier comprising an electricallyconductive material, the substrate carrier being configured to be inelectrical contact with the second electrode and to hold a substratesuch that at least the majority of upper and lower surfaces of thesubstrate are untouched by any part of the plasma reactor and can beexposed to the plasma; wherein the reactor vessel further comprises athird electrode comprised between the substrate carrier and the secondelectrode, wherein the third electrode is electrically insulated fromsaid second electrode; and wherein the third electrode is arranged suchthat, when the substrate carrier holds a substrate, a first clearancegap is comprised between the substrate and the third electrode.

The position of the third electrode and/or the position of the substratecarrier within the plasma reactor vessel may be adjustable, so that thesize of the first clearance gap between the third electrode and asubstrate held by the substrate holder may be adjustable. The plasmavoltage at a surface of the substrate may be determined by the magnitudeof the first clearance gap. The position of the third electrode and/orthe position of the substrate carrier within the plasma reactor vesselmay be adjusted to provide a predefined plasma voltage at the surface ofthe substrate.

Preferably the substrate carrier is configured to hold the substrate ata periphery of the substrate. The substrate carrier can be configured tohold the substrate at a periphery of the substrate such that an uppersurface and lower surface of the substrate are completely exposed, orsuch that at least the majority of the upper and lower surfaces of thesubstrate are exposed. In that latter configuration, said at least themajority of the upper and lower surfaces of the substrate are untouchedby the substrate carrier and/or by any part of the plasma reactorvessel. Preferably, the substrate carrier is configured to hold thesubstrate such that active areas of the upper and lower surfaces are notin contact with the substrate carrier. Here, the active areas correspondto the surface where devices are to be deposited. Preferably thesubstrate carrier is configured to hold the substrate within non-activeparts of the substrate only. Non-active parts can comprise a distance of0.5 mm to 2 mm, or 2 mm to 3 mm, or 0.5 mm to 10 mm at the periphery ofthe substrate surface.

Yet another aim of a favorable embodiment of the invention is to exploita compensation RF voltage for exposing in single vacuum sequences boththe upper and the lower surfaces of a substrate, without flipping thesubstrate and/or without touching the active areas of both faces of asubstrate. To achieve this aim, the plasma reactor vessel may comprise acompensating device configured to provide a compensating RF voltage tothe third electrode, the compensation RF voltage having a modulationphase opposite to the modulation phase of the RF voltage differentialbetween the first and the second electrodes. The amplitude of thecompensation RF voltage may be adjusted so that the amplitude of plasmavoltage at a surface of the substrate may be substantially equal to theamplitude of voltage at one of said first or second electrode.

The first clearance gap between the third electrode and the substrate issubstantially of constant thickness, this distance being comprisedbetween 0.5 mm and 3 mm. Preferably the first clearance gap is less than2 mm. Most preferably the gap is about 1 mm.

The present invention provides an assembly comprising a plurality ofplasma reactor vessels, at least one of the plurality of plasma reactorvessels being a plasma reactor vessel according one of theabove-mentioned plasma reactor vessels, wherein each of the plurality ofplasma reactor vessels are connected via a vacuum passage, wherein thevacuum passages are configured to allow a substrate to pass, and whereinat least one of said plasma reactor vessels is configured to provideplasma at an upper surface of the substrate, at least one of said plasmareactor vessels is configured to provide plasma at a lower, opposite,surface of the substrate. It will be understood that the upper surfaceis a first surface of the substrate and the lower surface is the secondsurface of the substrate which is opposite to the first surface. Thusthe upper and lower surfaces may lie on the same horizontal plane asdescribed in the embodiment of FIG. 3, or may lie on the same verticalplane, or may lie on in any plane between the horizontal and verticalplane.

The present invention also relates to low pressure processing of asubstrate that has active areas on both its upper and lower surfaces.The substrate is typically used to make an electronic, optical,electromechanical or electrochemical component. In most embodiments itis preferable that non-conductive substrates are used. It is alsopreferable that the substrates have a planar profile. Examples ofsubstrates which can be used in the present invention include dielectricsubstrates, such as thin glass substrates for touch screen displays, orsemiconductor wafers for power diodes or hetero-junction Silicon solarcells.

It is an objective of the present invention to provide a method ofperforming plasma processing on a substrate, uniformly and withouttouching active areas of the substrate. Also it is preferably that in asingle vacuum sequence process the other side of the substrate beentirely processed.

This objective is achieved by means of a method for performing plasmaprocessing using the reactor, comprising the steps of: arranging asubstrate carrier to hold a substrate; introducing the substrate carrierwhich holds the substrate into the vacuum chamber; positioning thesubstrate carrier within the vacuum chamber so as to align an upper orlower surfaces of the substrate with the first and/or second electrode;moving the third electrode to provide a first clearance gap, of apredefined value, between the substrate and the third electrode;applying a main RF voltage to the one of the first or second electrodeand grounding the other electrode; applying a compensating voltage tothe third electrode, wherein the compensation voltage is opposite inphase to the RF voltage differential applied between the first or secondelectrodes; providing plasma in a gap which is between the substrate andthe first or second electrode; and then igniting the plasma.

Other optional features of the invention are given in the dependentclaims of this application.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention will be better understood with the aid of the descriptionof embodiments of the invention, which are given by way of example only,and illustrated by the figures, in which:

FIG. 1 illustrates a conventional plasma capacitor processing reactor;

FIG. 2 illustrates a portion of a conventional plasma reactor (FIG. 2a )comprising a recess behind the substrate providing a first clearance andan equivalent RF circuit (FIG. 2b );

FIG. 3 shows a cross sectional view of a reactor vessel according to anembodiment of the present invention;

FIGS. 4a and b illustrate possible configurations for the compensatingdevice used in the reactor vessel of FIG. 3;

FIGS. 5a and b illustrate how the substrate carrier can be positioned inthe reactor vessel of FIG. 3;

FIGS. 6 a-c show the substrate and carrier assembly in successiveprocess position for coating successively both sides of the substrate;

FIGS. 7a-c show a perspective and cross-sectional views of the carrierand substrate assembly together with the second and third electrodeassembly according to a further embodiment of the present invention;

FIGS. 8a-c show various configurations for the substrate carrier used ina reactor vessel according to the present invention; and

FIG. 9 illustrates a fraction of a system assembly, in the form of aprocessing line, according to a further aspect of the present invention.

DETAILED DESCRIPTION OF POSSIBLE EMBODIMENTS

FIG. 3 shows a cross-sectional view of a plasma reactor vessel 100according to an embodiment.

The plasma reactor vessel 100 comprises a vacuum chamber 30 enclosed invacuum vessel 101; a plasma reactor volume 32 within the reactor groundwalls 100, a first electrode 2 in the reactor volume 32; a secondelectrode 8 in the vacuum chamber 30, opposed to the first electrode 2,facing the reactor volume 32 and spaced from the first electrode 2.

A power source 33 is electrically connected to the first electrode 2 forapplying a main RF voltage to the first electrode 2 such as to feedpower to a plasma in the plasma reactor volume 32. The second electrode8 is grounded. It will be understood that in another embodiment thepower source 33 may be electrically connected to the second electrode 8,and the first electrode 2 may be grounded.

A substrate carrier 13 which comprises an electrically conductivematerial is further provided in the plasma reactor vessel 100. Thesubstrate carrier 13 is configured so that it can be electricallyconnected with the second electrode 8 when substrate carrier 13 ispositioned in the vacuum chamber 30. The substrate carrier 13illustrated in FIG. 3 is shown to hold a substrate 11, such as a wafer.The substrate carrier 13 is configured to be removable from the vacuumchamber 30, to allow the substrate 11 to be mounted on the substratecarrier 13. The substrate carrier 13 holds at least one substrate 11such that at least the majority of an upper 40 a and opposite lowersurface 40 b of the substrate 11 are untouched by the substrate carrier13 or any other part of the plasma reactor 100. In the example which isillustrated in FIG. 3 the substrate carrier 13 comprises support members13 a, 13 b on which the substrate 11 rests; the length of the supportmembers 13 a, 13 b are such that they extend along non-active parts 11a, 11 b of the substrate 11 only; thus an active part 11 c of thesubstrate 11 remains untouched by the support members 13 a, 13 b or anyother part of the plasma reactor 100. It should be noted that the activepart 11 c of the substrate 11 is a part of the substrate which isexposed to the plasma 5 while the non-active parts 11 a, 11 b of thesubstrate are the parts of the substrate 11 which are in contact withthe substrate carrier 13.

In a variant, the support members 13 a, 13 b further contact the uppersurface of the substrate 11, that they extend along non-active parts 11a, 11 b of the substrate 11 only. It will be understood that in anotherembodiment the substrate carrier 13 may hold the substrate 11 only atits periphery so that the whole of the upper and lower surfaces 40 a, 40b of the substrate 11 remain untouched by the substrate carrier 13.

The reactor vessel 100 further comprises a third electrode 16 positionedbetween the substrate carrier 13 and the second electrode 8; suchpositioning of the third electrode 16 ensures that the third electrode16 is located between the substrate 11 and the second electrode 8. Thethird electrode 16 and the substrate carrier 13 are positioned such thatthere is a first clearance gap 12 between the third electrode 16 andsubstrate 11. The first clearance gap 12 ensures that the substrate 11is untouched by the third electrode 16. The first clearance gap 12 canbe between 0.5 mm and 3 mm; preferably less than 2 mm; and mostpreferably about 1 mm. Preferably reactor vessel 100 comprises a means(not represented) by which the position of the third electrode 16 may beadjusted so that a user can select and provide any desired firstclearance gap 12 between the substrate 11 and the third electrode 16.

The substrate carrier 13 may be configured such that the first clearancegap 12 remains constant along the entire surface of the substrate 11.For example, in the case the substrate 11 is very thin and bows due togravity, electrode 16 can be curved in order to follow the shape of thebowed substrate 11 such as to keep the first clearance gap 12 constant.

The substrate carrier 13 can be further arranged such as to minimizepossible geometric discontinuity at the intersection between thesubstrate carrier 13 and the substrate surface when the substrate 11 isheld in the substrate carrier 13. For example, the support members 13 a,13 b can be configured such that the active surface 11 c of thesubstrate 11 is leveled with the substrate carrier 13 (see FIG. 3). In avariant not represented, the substrate carrier 13 can comprisesymmetrically tapered edges narrowing towards the substrate 11. In thislatter configuration, the intersection between the substrate carrier 13and the substrate 11 may comprise a step.

Advantageously, since the substrate carrier 13 touches the substrate 11only at the non-active areas 11 a, 11 b of the substrate 11, and sincethere is the first clearance gap 12 between the third electrode 16 andsubstrate 11, the active area 11 c of the substrate 11 remains untouchedby any part of the plasma reactor 100. Accordingly the active area 11 cof the substrate 11 may be maintained uncontaminated.

In an embodiment, the vacuum vessel 101 further comprises a valve 26destined to introduce the substrate carrier 13 in the vacuum vessel 101,for example in a direction indicated by arrow 49. The substrate carrier13 can be inserted between the reactor body 100 and the second electrode8. The vacuum vessel 101 can further comprises another valve 26′, forexample opposite to the valve 26, such as to allow the substrate carrier13 to exit the vacuum vessel 101 at this other end.

In an embodiment, a compensating device 18 is electrically connected tothe third electrode 16 by a feed line 17. It should be understood thatthe compensating device 18 may take any suitable configuration; exampleconfigurations will be discussed in more detail later. For this examplethe compensating device 18 may be considered as a simple RF voltagesource.

The compensating device 18 is configured such that it can provide acompensating RF voltage V_(c)to the third electrode 16, the compensationRF voltage having a modulation phase opposite to the modulation phase ofthe RF voltage differential between the first electrode 2 and secondelectrode 8. In the case the second electrode 8 is grounded, the RFvoltage differential is equal to the main RF voltage which is applied bythe power source 33 to the first electrode 2.

The compensating device 18 is also electrically connected by means ofanother connector line 20 directly to the second electrode 8 orindirectly to a metallic part in contact with electrode 8; thus thecompensating device 18 is electrically connected between the secondelectrode 8 and the third electrode 16. As a result, in order for thethird electrode 16 to be provided with a compensating RF voltage V_(c),the compensating device 18 must provide the third electrode 16 with acompensation RF voltage V_(c) whose phase and amplitude are adjusted sothat the voltage of the substrate 11 takes the same value, by capacitiveeffect, than the value of the voltage on the second electrode 8.

The third electrode 16 is further electrically insulated from saidsecond electrode 8 by means of insulating spacing elements 22, 23, suchas ceramic holding pillars. The ceramic parts 22, 23 define a secondclearance gap 21 between the third electrode 16 and the second electrode8. The ceramic holding blocs 22, 23 may be replaceable with ceramicholding blocs of different dimension so as to enable a user to adjustthe size of the second clearance gap 21. It will be understood thatother means, beside ceramic holding blocs 22, 23 may be used toelectrically insulate the third electrode 16 from the second electrode8. Moreover, other means for adjusting the size of the second clearancegap 21 may be provided. In an embodiment, the second electrode 8comprises a recess 112. The second clearance gap 21 may be configured tobe of a predefined size by providing the second electrode 8 with theappropriate size recess and providing ceramic holding blocs 22, 23 withthe appropriate dimensions.

In an embodiment, the reactor vessel 100 comprises mechanical actuators(shown by numeral 28 in FIGS. 3 and 5) adapted for moving the secondelectrode 8 and third electrode 16 (back plate assembly) relatively tothe housing 603. This motion allows opening the plasma reactor volume 32to the vacuum chamber 30 when the back plate assembly is lowered andclosing it when the back plate assembly is moved upwards.

As can be best seen in FIGS. 5a and 5 b, the reactor vessel 100 isdivided into a first and second part 601, 602. The first part 601comprises the first electrode 2 which is located within a housing 100.The second part 602 comprises the second electrode 8 and the thirdelectrode 16 which are separated by the ceramic holding blocs 22, 23.Either the first or second part 601, 602 is moveable relative to theother part, for example by using the actuator 28. The substrate carrier13 is positioned between the first and second part 601, 602. Preferablythe substrate carrier 13 is moved in the direction of arrow 49, intoposition by means of robotic transport. The first and second parts 601,602 are arranged so that they each are in abutment with the substratecarrier 13 so that the first and second parts 601, 602 and substratecarrier 13 define the plasma reactor volume 32. Specifically first andsecond parts 601, 602 are arranged so that the housing 100 is inabutment with the substrate carrier 13 and so that the second electrode8 is in abutment with the substrate carrier 13. When the housing 100 isin abutment with the substrate carrier 13, the substrate carrier 13 canbe pinched between the back plate assembly 8 and the housing 603. In avariant not represented, the substrate carrier 13 can move in thedirection of arrow 49 when pinched.

It should be understood that in an alternative embodiment the first andsecond parts 601, 602 may be arranged so that they are no in abutmentwith the substrate carrier 13. In this case, the first and second parts601, 602 are arranged so that there is a gap between each of the firstand second parts 601, 602 and the substrate carrier 13. This gap may beused to supply or extract gas from the reaction vessel 100. In suchconfiguration, the electrical contact between the second electrode 8 andthe housing 603 can comprise a flexible ribbon (not shown) electricallyconnecting the housing 603 to the second electrode 8.

In practice the second part 602 of the reaction vessel 100 may be movedtowards the first part 601 of the reaction vessel 100; or in alternativeembodiments, the first part 601 of the reaction vessel 100 may be movedtowards the second part 602 of the reaction vessel 100; or both thefirst and second parts 601, 602 may be moved towards one another; so asto clamp the substrate carrier 13 between the first and second parts601, 602, thereby defining a plasma chamber in which a reactive processis applied to form the plasma reactor volume 32.

As illustrated in FIGS. 5a and 5b and in FIGS. 6 a, 6 b and 6 c, duringuse, the first and second parts 601, 602 of the reactive vessel 100 aremoved apart. The substrate 11 is provided on the substrate carrier 13and the substrate carrier 13 is positioned between the first and secondparts 601, 602 of the reactive vessel 100. FIGS. 6a to 6b illustrate thepositioning of the substrate carrier 13 in the chamber 32 that isarranged for coating the upper side of the substrate 11. The substratecarrier 13 is positioned along the horizontal (arrow 49 in FIG. 5a ) sothat it is aligned and preferably centred, under the first electrode 2and beneath the second and third electrodes 8, 16.

It will be understood that the substrate carrier 13 may be positionedmanually or automatically using any suitable positioning means; forexample using a chain, carriage or transportation fork (not shown) whichwill facilitate the user when positioning the substrate carrier 13.These transmission elements 14 may be held by the user when positioningthe substrate carrier 13 or alternatively the transmission elements 14may be connected to a chain which is driven by an actuator or otherautomatic driven transporting means to allow for automatic positioningof the substrate carrier 13.

Once the substrate carrier 13 is positioned so that it is aligned andpreferably centred, under the first electrode 2 and beneath the secondand third electrodes 8, 16, the second part 602 of the reactive vessel100 is moved towards the first part 601 so as to clamp the substratecarrier 13 between the first and second parts 601, 602, thereby defininga semi tight plasma reactive volume 32 in which the plasma is confined.Specifically the substrate carrier 13 is clamped between the secondelectrode 8 and the housing 603 in which the first electrode 2 ishoused. Since the substrate carrier 13 comprises electrically conductivematerial, the housing 603 is thus electrically connected to the secondelectrode 8 by means of the substrate carrier 13.

The positioned first and second parts 601, 602 are then preferablysecured during a complete plasma process sequence.

The advantages of having a first and second parts 601, 602 of thereactive vessel 100 which move relative to one another is that the firstand second parts 601, 602 can be moved to mechanically contact thesubstrate carrier 13 and the second electrode 8, to defining precisely apredefined first clearance gap 12. Furthermore, moving the first andsecond parts 601, 602 together closes the plasma reactor volume 32allowing it to operate in a plasma box regime. Also when the first andsecond parts 601, 602 have been moved together to clamp the substratecarrier 13 and contact the second electrode 8, this ensures that thereactive vessel 100, the substrate carrier 13 and the back plate 8 areall electrically grounded.

In the example illustrated in FIGS. 6 a, 6 b and 6 c, the positioningmeans may comprise a spring element 27 (represented by a flat spring)mechanically connected to the substrate carrier 13 and to a fixed part26 of the positioning means. The fixed part is shown as a frame 26. Thespring element 27 allows the substrate holder 14 to move and adjustvertically under the force transmitted by the second electrode 8. Thespring element 27 further maintains the substrate carrier 13 in aposition centered between the first part 601 and the second part 602,when the first and second parts 601, 602 are moved apart. FIG. 6crepresents the reactor vessel 100 of FIGS. 6a and 6b upside down. Theconfiguration of FIG. 6c can be used for exposing the lower surface 40 b(see FIG. 3) of substrate 11 to the plasma.

It should be noted that the height of the ceramic holding blocs 22, 23and the depth of the recess 112 are chosen such that when the first andsecond parts 601, 602 are brought together to the vacuum chamber 30, thefirst clearance gap 12 is equal to a predefined value.

Next, as shown in FIGS. 6b and 6 c, plasma 5 is provided into the plasmachamber 32. The power source 33 is used to applying a main RF voltage tothe first electrode 2; this main RF voltage charges the plasma 5 in theplasma reactor volume 32 which causes plasma deposition on the uppersurface 40 a (see FIG. 3) of the substrate 11. The charged plasma 5induces by capacitive effect, a voltage on the upper surface 40 a of thesubstrate 11.

At the same time the power source 33 is used to apply a main RF voltageto the first electrode 2, the compensating device 18 is operated toprovide the third electrode 16 with a compensating RF voltage V_(c). Theamplitude of the compensating RF voltage V_(c) is between 10 to 100% ofthe main RF voltage, but the phase of compensating RF voltage V_(c) isopposite to the phase of the voltage differential between the first andsecond electrodes 2 and 8.

With the main RF voltage applied to the first electrode 2 and thecompensating voltage applied to the third electrode 16, the plasma 5 inthe vacuum chamber 30 is then ignited and plasma deposition on thesubstrate 11 takes place.

The compensating RF voltage V_(c) induces, by capacitance effect, avoltage on the lower surface 40 b of the substrate 11 which cancels thevoltage which is induced on the upper surface 40 a of the substrate 11by the charged plasma 5. The voltage induced on the lower surface 40 bof the substrate 11 cancels off the effect of the series capacitanceintroduced by the clearance gap 12. As a consequence the upper surface40 a of the substrate 11 will have a resulting potential which isconstant across the upper surface 40 a of the substrate and is equal tothe potential of the adjacent second electrode 8. As the potentialacross the upper surface 40 a of the substrate 11 is constant, uniformlydistributed plasma deposition across the upper surface 40 a will occur.

For example, assuming that the second electrode 8 is grounded (zerovoltage) and that the driving RF voltage delivered by the power source33 on the first electrode 2 is V₀, and that the RF voltage between theplasma 5 and the second electrode 8 is V_(RF), and further assuming thatthe plasma is quasi-symmetric, then the RF plasma voltage V_(RF) will beapproximately V_(RF)=V₀/2, a good estimate of the RF voltage across thesheath 6 (see FIGS. 1-3). The compensating RF voltage provided by thecompensating device 18 to the third electrode 16 is V_(c). The effectivevoltage V_(eff) at the upper surface 40 a of the substrate 11 is then:

V _(eff)=(V _(RF) −V _(c))e _(s)/(e _(s) +e _(g))   Eq. (3).

By choosing a suitable value for V_(c) the effective voltage V_(eff) canbe made equal to V_(RF). The suitable value for V_(c) which ensure thatthe effective voltage V_(eff) is equal to V_(RF) can be determined as:

V _(c)=−(e _(g) /e _(s))V _(RF)   Equation (4),

wherein e_(g) is the first clearance gap 12 between the substrate 11 andthe third electrode 16 and e_(s) is the thickness of the plasma sheath6.The minus sign indicates that the phase will be opposite to the one ofV_(RF).

Recalling that the sheath thickness is ranging between 1 and 3 mm, thecompensation voltage will be between 33% to 100% of the RF voltageV_(RF) for a first clearance gap 12 of 1 mm, or between 66 to 200% for afirst clearance gap 12 of 2 mm. As the RF voltage V_(RF) isapproximately half of the driving RF voltage V₀, the compensationvoltage Vc will range between 16 to 100% of the main RF voltagedelivered by the power source 33 when the first clearance gap 12 is keptbetween 1 and 2 mm.

Hence the compensation voltage Vc for the third electrode will remain ofthe order or less than the main RF voltage, preferably about one thirdof it.

As mentioned the compensating device 18 may take any suitableconfiguration. Examples of two different suitable compensating devices18 a, 18 b are shown in FIGS. 4a and 4b respectively. Each of thecompensating devices 18 a, 18 b provides the compensating RF voltageV_(c) to third electrode 16 in a different manner.

The compensating device 18 a is essentially made of a self-inductancecoil 19 which electrically connects the second electrode 8 to the thirdelectrode 16. The equivalent electrical circuit representing, from thesubstrate 11 through the compensating device 18 a to the third electrode16, is also illustrated in FIG. 4 a. The equivalent electrical circuitcomprises a capacitance C_(g) which is the capacitance between the thirdelectrode 16 and the substrate accounting for the first clearance gap12, and a capacitance C_(b) accounting for the mutual capacitancebetween electrode 16 and the enclosing second electrode 8 which includesthe contribution of the capacitance of the second clearance gap 21 plusthe contributions of both the third electrode periphery and ceramicspacing elements 22, 23. It is easy to derive that such a system ofimpedance connecting substrate 13 to the second electrode 8 has a zeroof net impedance at resonance when the following condition is met:

L(C _(g) +C _(b))ω ²=1   Equation (5),

wherein ω is the resonant frequency.

Zero impedance between the substrate 13 and electrode 8 means that bothparts are at the same RF voltage. Thus, by providing a self-inductancecoil 19 with the appropriate self-inductance L, where ω is equal to theRF frequency, the self-inductance coil 19 will compensate forcapacitance C_(g) which results from the first clearance gap 12 betweenthe substrate 11 and third electrode 16. Specifically by providing aself-inductance coil 19 which has a self-inductance L which is equal to1/(C_(g)+C_(b))ω ², where ω is the driving RF frequency, theself-inductance coil 19 will provide the proper compensating voltage foreliminating the series impedance effect of capacitance C_(g) whichresults from the first clearance gap 12 between the substrate 11 andthird electrode 16.

One of the advantages of the compensating device 18 a is the simplicityof the configuration; the compensating device 18 a comprises a simpleself-inductance coil 19 which can be made compact, using, for example,strip line technology.

FIG. 4b illustrates a further example of a compensating device 18. Thecompensating device 18 b shown in FIG. 5b is an alternative to the selfinductance based on a RF power inlet coming from the main generator 33.The compensating device 18 b comprises a RF power inlet 51 where afraction of RF power is extracted from the RF supply 33, and variousadjustable circuits very similar to circuits found in classical RF matchboxes. It comprises a voltage control means 52 which can be used toadjust the RF voltage which is output from the RF power source 51. Italso comprises a means to invert and adjust the phase of the RF powerfed via line 23 to the third electrode 16, as this can be done withclassical transformers.

For proper adjustment of the compensation system, whether it is a selfinductance as 18 a or a subsidiary match box as 18 b, it is recommendedto calibrate the phase and amplitude of the compensation voltage. A goodpart of it can be done by calibration, mocking up the plasma with ametal block, with free spacing mocking the sheaths and as a mock up forthe substrate, an insulating plane carrying a metallization pad on it.Then an RF probe can pick the voltage differential between the metal padand the adjacent electrode 8. The adjustment consists in zeroing theprobe differential signal. This technique is by far enough to adjust theamplitude and phase of Vc (for example to adjust the value of L). Finetuning using real plasma and measurement of uniformity can be doneafterward.

It will be understood that the compensating device 18 may take any othersuitable configuration, other than the configurations shown in FIGS. 4aand 4 b. For example, various circuits, passive or active are able toprovide the third electrode 16 with a compensating RF voltage V_(c).These various circuits may be configured to allow adjustment of bothamplitude and phase of the compensating RF voltage V_(c). However,regardless of its configuration, the compensating device 18 can beconfigured such that it can provide the third electrode 16 with acompensating RF voltage V_(c) which is such that the substrate 11 andthe adjacent second electrode 8 have the same RF voltage.

In the above reactor vessel 100 examples, the substrate carrier 13 wasshown to be configured to hold a single substrate 11 above a singlethird electrode 16. FIGS. 7a to 7c illustrate a different carrier 113and the corresponding back plate assembly 602 according to a furtherembodiment of the present invention. The top part of the reactorassembly 601 is the same as in FIG. 5 a, it has many of the samefeatures of the plasma reactor vessel 100 shown in FIG. 3 and likefeatures are awarded the same reference numbers. However, the substratecarrier 813 can hold four substrates and the back plate assembly 602′below can be adapted to this modified geometry, in particular having amultiplicity of compensating electrodes 16 beneath the multiplicity ofsubstrate.

In FIG. 7, the substrate carrier 813 comprises an electricallyconductive material and is configured so that it can be electricallyconnected with the second electrode 8 when the substrate carrier 813 ispositioned in the vacuum chamber 30. The substrate carrier 813illustrated in FIG. 7a is shown to hold four substrates 811, such asfour wafers. The substrate carrier 813 is configured to be removablefrom the vacuum chamber 30, to allow the substrates 811 to be mounted onthe substrate carrier 813. The substrate carrier 813 holds each of thesubstrates 811 such that at least the majority of an upper 40 a andopposite, lower surface 40 b, of each substrate 811 are untouched by thesubstrate carrier 813 or any other part of the plasma reactor 100. Inthe example which is illustrated in FIG. 7a the substrate carrier 813comprises a four cut-out portions 814 each of which preferably have anarea which is greater than the area of a substrate 811 and which canreceive a substrate 811. The manner in which each of the substrates 811are held in a cut-out portion 814 is similar to what was described foran individual substrate in FIG. 3, with supports having contact with thesubstrate only at the very edge where the device to be deposited is notactive. As illustrated in FIG. 7 b, the substrate carrier 813 comprisessupport members 813 a, 813 b which extend into the cut-out portions 814.The substrates 811 rests on these support members 813 a, 813 b; thelength of the support members 813 a, 813 b is such that they extendalong non-active parts 811 a, 811 b of each substrate 811 only. Thus anactive parts 811 c of each substrate 811 remains untouched by thesupport members 813 a, 813 b or any other part of the plasma reactor800. It will be understood that in an alternative embodiment thesubstrate carrier 813 will not comprise support members 813 a, 813 b andthe cut-out portions 814 may each have an area which is slightly lessthan the area of a substrate 811 so that each substrate can restdirectly on the substrate carrier 813 above a corresponding cut-outportion 814. Again, in this case it is most preferable that substratecarrier 813 contacts only the non-active parts 811 a, 811 b of eachsubstrate 811.

In FIGS. 7a and 7 b, the corresponding back plate assembly 602′ furthercomprises four third electrodes 816, corresponding to the four cut-outportions 814 provided in the substrate carrier 813. Each of the fourthird electrodes 816 is electrically connected to a compensating device.Each of the four third electrodes 816 is positioned between thesubstrate carrier 813 and the second electrode 8 and the substratecarrier 813 may be arranged such that each of its cut-out portions 814are aligned over a corresponding third electrode 816. Thus eachsubstrate 811 held by the substrate carrier 813 can be aligned over acorresponding third electrode 816. As was the case in the plasma reactorvessel 100, each of the third electrodes 816 are positioned such thatthere is a first clearance gap 12 between each third electrode 816 andsubstrate 811. The first clearance gap 12 ensures that each substrate811 is untouched by its corresponding third electrode 816. Preferablythe first clearance gap 12 between each substrate 811 and itscorresponding third electrode 816 is about 1 mm.

In FIG. 7 b, the second electrode 8 further comprises a post 25′ locatedtowards the centre of the second electrode 8. During use, when thesubstrate carrier 813 is brought into electrical contact with the secondelectrode 8, a center of the substrate carrier 813 will rest on the post25′. The post 25′ will provide structural support to substrate carrier813 so as to prevent the substrate 811 from warping under its own weightThis ensures that a uniform distance between each of the substrates 811and its corresponding third electrodes 816 is maintained.

Although substrate carrier 813 is shown comprising four cut-out portions814 and corresponding four third electrodes 816, it should be understoodthat the substrate carrier 813 may comprise any number of cut-outportions 814 and corresponding any number of third electrodes 816.

FIG. 7c illustrates a simpler design for a carrier accepting amultiplicity of substrates. In that case the third electrode 16 is asingle monolithic plate covering the ensemble of the substrate area andthe adjacent parts of the substrate carrier such as 13 a and 13 b. Thisdesign is preferable for its simplicity as long as the planarity of thesubstrate carrier 13 can be preserved.

For example, FIG. 8c illustrate a cross section view of plasma reactorvessel 900 in which has a substrate carrier 913 which comprises fourcut-out portions 914 each of which can receive a substrate. Instead ofproviding a corresponding number of third electrodes, the reactor vessel900 comprises a single third electrode 916 which is large enough toextend beneath all four of the cut-out portions 914. The single thirdelectrode 916 is electrically connected to a compensating device 18.This design is sufficient if the mechanical flatness of both carrier 913and back plate assembly 902 are sufficient to guaranty a good control ofthe first clearance gap 12 beneath all the substrates 811.

Installing and running a plasma process requires changing the gaspressure inside the plasma reactor vessel, first installing the processpressure, then pumping out at the end of the process. During thepressure changes there is a danger that a transient pressuredifferential develops between upper and lower surfaces of substrate(s);the transient pressure differential can lead to distortion of a verythin substrate. The substrate may warp to the extent that it touches athird electrode in the plasma reactor vessel. Or it may break. It istherefore desirable to limit the pressure differential between the upperand lower surfaces of the substrates.

To address this problem, it is favorable to allow gas communicationbetween the two volumes within the plasma vessel reactor facing theupper and lower surfaces of the substrate; for example in the embodimentillustrated in FIG. 8 a, because the area of the cut-out portion 914 inthe substrate carrier 913 is configured to be larger than substrate 911,a gap 62 is provided between the periphery of each substrate 911 and thepart of the substrate carrier 813 which define the cut-out portion. Mostpreferably, area of the cut-out portion 914 is such that the gap 62 isequal to or less than 1 mm, preferably around 0.8 mm. The gap 62 willpermit gas to pass between the volumes in plasma vessel reactor facingthe upper and lower surfaces of the substrate. Thus, there will be nopressure differential between the areas in plasma vessel reactor inwhich the upper and lower surfaces occupy.

An alternative solution is illustrated in FIG. 8 b. In FIG. 8b thesubstrate carrier 913 comprises a cut-out portion which does not providesufficient communication for gas at the periphery of substrate 911. Toallow gas exchange between the two volumes in plasma vessel reactorfacing the upper and lower surfaces of the substrate, the substratecarrier 913 comprise a plurality of holes 61 which allow gas to passthrough the substrate carrier 913 and thus allow gas exchange betweenthe areas in plasma vessel reactor in which the upper and lower surfacesoccupy. Preferably the diameter of each of the holes is less than 1 mm.Preferably more than thirty holes 61 are provided in the substratecarrier 913.

Keeping the same pressure at the upper and lower surfaces of thesubstrate(s) and processing the exposed surface of the substrate at thereactive place on one face 40 a implies that the volume behind thesubstrate enclose in assembly 902 and covered by the carrier 913 and thesubstrate(s) 911 form a close volume in diffusive communication with theactivated gases from the plasma volume 30. Moreover, in some particularPECVD processes, the ambient gas may contain unstable species leading tosecondary contamination by the gas phase of the lower surface of thesubstrate; this may occur commonly in the doped layer depositionprocesses.

In order to limit such secondary contamination, a conduit 64 may beprovided which is arranged to provide a flow of inactive gas across thelower surface 40 b of the substrate(s), as shown in FIG. 8 c. In theexample shown in FIG. 8c the conduit 64 is passed through the secondelectrode 8. A gas supply 63 is connected to the conduit 64, and itprovides inactive gas which flows through the conduit, and across thelower surface 40 b of the substrate(s). The flow of inactive gas willlimit the accumulation of process gas on the lower surface 40 b of thesubstrate(s) and will also rinse the area below the lower surface 40 b.

It should be noted that the flow of inactive gas over the lower surface40 b of the substrate(s) is only needed when the processing atmospherewithin the plasma reactor vessel is baring a risk of spurious depositionwhich would lead to secondary contamination of the lower surface 40 b ofthe substrate(s) (as it would be the case during PECVD process withBoron hydrides). For cases where the plasma reactor vessel may notrequire a gas supply 63 and conduit 64, instead the plasma volume 821may either stay in static volume or allowed to communicate with theouter vacuum volume 30.

Typically any of the above-mentioned plasma reactor vessels may be usedto form a production assembly. FIG. 9 illustrates an example of anassembly according to the present invention; the assembly defines aproduction line which comprises four vacuum vessels 1000 a-d. Asubstrate 1011 is transported successively to each of the four plasmareactive vessels 1000 a-d. Two of the vessels are represented equippedwith PECVD reactors, the vessel 1000 a with a reactor coating thesubstrate downward, the next vessel 1000 c with a reactor coating theother face of the substrate, namely upward. Typically the substrate 1011is transported successively to each of the vessels 1000 a-d according toarrows 100 ab-bc-cd, by means of a carriage or some other suitableautomatic transporting means.

In the example of FIG. 9, the four vessels 1000 a-d are placed is seriesas it would be in a classical in-line vacuum processing system. It willbe easily understood by specialists that the same concept of sequentialprocessing can be designed in a cluster type processing systemarchitecture. In FIG. 9, the reactor 1000 c has a configuration which isthe inverse of the configuration of the preceding plasma reactive vessel1000 b. In other words, in a first plasma reactive vessel 1000 b thesecond and third electrodes 8, 16 are located below the lower surface 40b of the substrate 1011 and the first electrode 2 is located above theupper surface 40 a of the substrate 1011. In the second plasma reactivevessel 1000 b along the production line, the second and third electrodes8, 16 are located above the upper surface 40 a of the substrate 1011 andthe first electrode 2 is located below the lower surface 40 b of thesubstrate 1011. As a result of the inverted configuration of successiveplasma reactive vessels, plasma deposition will take place on the uppersurface 40 a in the first plasma reactive vessel 1000 a in theproduction line; on the lower surface 40 b in the second plasma reactivevessel 1000 b in the production line; on the upper surface 40 a in thethird plasma reactive vessel 1000 c in the production line; and finallyon the lower surface 40 b in the fourth plasma reactive vessel 1000 d inthe production line. It should be noted that a first substrate 10011 isseen pre-positioned in the reactor of chamber 1000 b, while thepreceding substrate in the coating production sequence is seenprepositioned in the next chamber 1000 c.

The assembly is not limited to the exemplary configuration of FIG. 9 butcan further comprises any combination of vessels such as to be able toperform any arbitrary sequence of processes. For example, the assemblycan comprise a number of vessels different from four. The plurality ofvessels can be arranged so that the substrate 1011, when transportedfrom a vessel to another, can be processed in any possible combinationof process steps. For example, the substrate 1011 can be processedsequentially upwardly and downwardly, several times upwardly (ordownwardly) and then downwardly (or upwardly). For example, thesubstrate 1011 can be transported successively to the successive processmodules including the plasma reactive vessels 1000 b-c which arerepresented equipped with PECVD reactors, the vessel 1000 b with areactor coating the substrate downward, the next vessel 1000 c with areactor coating the other face of the substrate, namely upward.Typically the substrate 1011 is transported successively to each of thevessels 1000 a-d by means of a carriage or some other suitable automatictransporting means. The plurality of vessels can also be arranged suchthat the combination of process steps comprises a combination of PECVDprocess steps and other process steps such as load-lock, heating,cooling, substrate flipping, plasma etching, plasma cleaning and PVDdeposition such as evaporation or sputtering and reactive sputtering.

As alternative to the above-mentioned production line, each of theplasma reactive vessels 1000 a-d may have all the same configuration,and a means for flipping the substrate 1011 may be provided. The meansfor flipping the substrate 1011 will be operated to flip the substrate1011 between successive plasma reactive vessels 1000 a-d so that plasmadeposition can take place on the upper and lower surfaces 40 a, 40 b ofthe substrate 1011 successively, at each plasma reactive vessels 1000a-d along the production line.

It should be noted that it is most preferable to connect each of thefour plasma reactive vessels 1000 a-d by means of vacuum passages, alongwhich the substrate 1011 can be passed. That way the substrate can bemaintained in a vacuum environment as it is passed between the fourplasma reactive vessels 1000 a-d. Typically the substrate (or the set ofsubstrates) will be held in a single substrate carrier 1013 and thatsubstrate carrier, which holds the substrate 1011, will be passed to thefour reactive vessels 1000 a-d successively.

The concept of the present invention is addressing specific deviceswhere both sides of a substrate should contribute to the activity of aphoto-electronic device. For example the present invention could be usedin the manufacture of hetero-junction cells, or in the manufacture ofpower rectifiers.

1. Plasma reactor vessel, comprising a vacuum chamber; a first electrodein the vacuum chamber; a second electrode in the vacuum chamber, opposedto the first electrode and spaced from the first electrode; a means forproviding reactive process gases in the vacuum chamber; a power sourceelectrically connected to one of the first or second electrodes, forapplying a main RF voltage to one of the first and second electrodes,the other electrode being grounded; a substrate carrier comprising anelectrically conductive material, the substrate carrier being configuredto be in electrical contact with the second electrode and to hold asubstrate such that at least the majority of upper and lower surfaces ofthe substrate are untouched by any part of the plasma reactor and can beexposed to the plasma; the reactor vessel further comprising a thirdelectrode between the substrate carrier and the second electrode,wherein the third electrode is electrically insulated from said secondelectrode; and wherein the third electrode and the substrate carrier arearranged such that, when the substrate carrier holds a substrate, afirst clearance gap is comprised between the substrate and the thirdelectrode.
 2. Plasma reactor vessel according to claim 1 furthercomprising a compensating device configured to provide a compensating RFvoltage to the third electrode, the compensation RF voltage having amodulation phase opposite to the modulation phase of the RF voltagedifferential between the first electrode and the second electrode. 3.The reactor according to claim 2, wherein the first clearance gapbetween the third electrode and substrate is between 0.5 mm and 3 mm. 4.The reactor according to claim 1, further comprising a second clearancegap between the third electrode and said second electrode, the secondclearance gap electrically insulating the third electrode from saidsecond electrodes.
 5. The reactor according to claim 2, wherein saidcompensating device comprises a voltage source which can generate an RFsignal, and the third electrode is electrically connected to the voltagesource via a feed line.
 6. The reactor according to claim 2, whereinsaid compensating device comprises a coiled self-inductance electricallyconnecting said second electrode to the third electrode.
 7. The reactoraccording to claim 1, further comprising insulating spacing elementsbetween the third electrode and said second electrode, the magnitude ofthe second clearance gap being determined by the height of theinsulating pillars.
 8. The reactor according to claim 7, wherein saidinsulating pillars comprise ceramic blocks.
 9. The reactor according toclaim 1, wherein said substrate carrier is configured to hold aplurality of the substrates.
 10. The reactor according to claim 9,wherein the substrate carrier comprises a plurality of cut-out portions,each cut-out portion being adapted to receive a substrate.
 11. Thereactor according to claim 10, the reactor vessel comprises a pluralityof the third electrodes, each of said plurality of the third electrodebeing aligned with a corresponding cut-out portion in the substratecarrier.
 12. An assembly comprising a plurality of plasma reactorvessels at least one of the plurality of plasma reactor vessels being aplasma reactor vessel according to claim 1, wherein each of theplurality of plasma reactor vessels are connected via a vacuum passage,wherein the vacuum passages are configured to allow a substrate to pass,and wherein at least one of said plasma reactor vessels is configured toprovide plasma at an upper surface of the substrate, at least one ofsaid plasma reactor vessels is configured to provide plasma at a lower,opposite, surface of the substrate.
 13. An assembly according to claim12 plasma reactor vessels are configured so that every second plasmareactor vessel provides plasma on the upper surface of the substrate,and every other plasma reactor vessels is configured to provide plasmaat a lower, opposite, surface of the substrate.
 14. A method forperforming plasma processing using a plasma reactor vessel comprising avacuum chamber; a first electrode in the vacuum chamber; a secondelectrode in the vacuum chamber, opposed to the first electrode andspaced from the first electrode; a means for providing reactive processgases in the vacuum chamber; a power source, electrically connected toone of the first or second electrodes, for applying a main RF voltage toone of the first and second electrodes, the other electrode beinggrounded; a substrate carrier comprising an electrically conductivematerial, the substrate carrier being configured to be in electricalcontact with the second electrode and to hold a substrate such that atleast the majority of upper and lower surfaces of the substrate areuntouched by any part of the plasma reactor and can be exposed to theplasma; a third electrode between the substrate carrier and the secondelectrode, the third electrode being electrically insulated from saidsecond electrode; and the third electrode and the substrate carrierbeing arranged such that, when the substrate carrier holds a substrate,a first clearance gap is comprised between the substrate and the thirdelectrode; the method comprising: arranging a substrate carrier to holda substrate; positioning the substrate carrier within the vacuum chamberso that a to align an upper or lower surfaces of the substrate with thefirst or second electrode; moving the third electrode 16 to provide afirst clearance gap, of a predefined value, between the substrate andthe third electrode; moving the second and/or first electrode so as toprovide a plasma reactor volume; applying a main RF voltage to the oneof the first or second electrodes and grounding the other electrode;applying a compensating voltage to the third electrode, wherein thecompensation voltage is opposite in phase to the main RF voltagedifferential applied between the first electrode and the secondelectrode; providing plasma in a gap which is between the substrate andthe first electrode; and then igniting the plasma.